![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_off.png)
Description
FDMS7678 : 30V N-Channel Power Trench MOSFET. For complete documentation, see the data sheet. This N-Channel MOSFET is produced using Fairchild Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDMS7678 . PQFN-8 (TFSnCuBW). FSCP. FSCP. 0.105957. 1. Terminal.
Part Number | FDMS7678 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | SK Hynix |
Description | MOSFET N-CH 30V 17.5A POWER56 |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 17.5A (Ta), 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 17.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PQFN (5x6), Power56 |
Package / Case | 8-PowerTDFN |
Image | ![]() |
FDMS7678
SK Hyn
4583
0.31
HK HEQING ELECTRONICS LIMITED
FDMS7678
vixSK HY
3000
1.2175
Shenzhen Qiangneng Electronics Co., Ltd.
FDMS7678
NISK
9000
2.125
SUMMER TECH(HK) LIMITED
FDMS7678
SK Hynix Inc
9000
3.0325
Hong Kong In Fortune Electronics Co., Limited
FDMS7678
SK HYNIX/
3000
3.94
HONG KONG HORNG SHING LIMITED