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Description
S Tm S :w G. R m. m. 2 N o,. O M m .u .mf. T m A m u. .w w m s S 5. m m m w . m m .m .l bF. _. w.. _m m __ w m cw __ p. L_ mm m _._. Th c c E ll l J V. 0c m . 105-dB SNR (A-Weighted) speaker. . 0.07% THD+N @ 1 W. The TAS5186A has an innovative protection system. . Power Stage Efficiency > 90% Into. The contents in this document are subject to changes, for improvement and other purposes, without notice. Be sure to check the delivery specifications before Dec 24, 2009 High output power in typical applications: SE 2 210 W, RL = 4 (VDD = 41 V ; VSS = 41 V). SE 2 235 W, RL = 3 (VDD = 39 V; VSS Stresses exceeding Maximum Ratings may damage the device. Maximum. Ratings are stress ratings only. Functional operation above the Recommended.
| Part Number | 2SC3858 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | SK Hynix |
| Description | TRANS NPN 200V 17A MT-200 |
| Series | - |
| Packaging | Bulk |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 17A |
| Voltage - Collector Emitter Breakdown (Max) | 200V |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 1A, 10A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 8A, 4V |
| Power - Max | 200W |
| Frequency - Transition | 20MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | 3-ESIP |
| Supplier Device Package | MT-200 |
| Image |  |
2SC3858
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